r07ds0233ej0200 rev.2.00 page 1 of 6 dec 24, 2014 preliminary datasheet bcr2pm-14le 800v ? 2a - triac low power use features ? i t (rms) : 2 a ? v drm : 800 v (tj = 125c) ? i fgt i , i rgt i , i rgt iii : 10 ma ? planar passivation type ? the product guaranteed maximum junction temperature 150c. outline renesas package code: prss0003aa-b (package name: to-220f(2) ) 1. t 1 terminal 2. t 2 terminal 3. gate terminal 2 1 3 2 1 3 applications electric rice cooker, el ectric pot, and controller for other heater precautions on usage when the bcr2pm-14le is used, do not attach the heat radiating fin. maximum ratings parameter symbol voltage class unit condition 14 repetitive peak off-state voltage note1 v drm 800 v tj = 125c 700 v tj = 150c non-repetitive peak off-state voltage note1 v dsm 840 v r07ds0233ej0200 rev.2.00 dec 24, 2014
bcr2pm-14le preliminary r07ds0233ej0200 rev.2.00 page 2 of 6 dec 24, 2014 parameter symbol ratings unit conditions rms on-state current i t (rms) 2 a commercial frequency, sine full wave 360 conduction surge on-state current i tsm 10 a 60 hz sinewave 1 full cycle, peak value, non-repetitive i 2 t for fusing i 2 t 0.41 a 2 s value corresponding to 1 cycle of half wave 60 hz, surge on-state current peak gate power dissipation p gm 1 w average gate power dissipation p g (av) 0.1 w peak gate voltage v gm 6 v peak gate current i gm 1 a junction temperature tj ? 40 to +150 c storage temperature tstg ? 40 to +150 c mass ? 2.0 g typical value notes: 1. gate open. electrical characteristics parameter symbol min. typ. max. unit test conditions repetitive peak off-state current i drm ? ? 1.0 ma tj = 150 c, v drm applied on-state voltage v tm ? ? 2.1 v tj = 25 c, i tm = 3 a, instantaneous measurement gate trigger voltage note2 v fgt ? ? 2.0 v tj = 25 c, v d = 6 v, r l = 6 , r g = 330 ? v rgt ? ? 2.0 v ?? v rgt ?? ? ? 2.0 v gate trigger current note2 i fgt ? ? 10 ma tj = 25 c, v d = 6 v, r l = 6 , r g = 330 ? i rgt ? ? 10 ma ?? i rgt ?? ? ? 10 ma gate non-trigger voltage v gd 0.1 ? ? v tj = 150 c, v d = 1/2 v drm thermal resistance r th (j-a) ? ? 45 c/w junction to ambient, natural convection critical-rate of rise of off-state commutation voltage note3 (dv/dt)c 0.5 ? ? v/ s tj = 125 c notes: 2. measurement usi ng the gate trigger characteristics measurement circuit. 3. test conditions of the critical-rate of rise of off-state commutation voltage is shown in the table below. test conditions commutating voltage and current waveforms (inductive load) 1. junction temperature tj = 125 c 2. rate of decay of on-state commutating current (di/dt)c = ?1.0 a/ms 3. peak off-state voltage v d = 400 v supply voltage time time time main current main voltage (di/dt)c v d (dv/dt)c
bcr2pm-14le preliminary r07ds0233ej0200 rev.2.00 page 3 of 6 dec 24, 2014 performance curves p gm = 1 w p g(av) = 0.1 w i gm = 1 a i rgt i , i rgt iii v gm = 6 v v gd = 0.1 v v gt i fgt i , i rgt i , i rgt iii 3 2 7 5 7 5 3 2 7 5 3 2 10 1 10 0 10 ?1 ?60 ?40?20 0 20 40 60 80 100120 140160 2 3 5710 1 10 0 23 5710 2 235 710 3 10 3 7 5 3 2 7 5 3 2 10 2 10 1 3.8 0.6 1.4 2.2 3.0 1.0 1.8 2.6 3.4 10 2 10 1 10 0 10 ?1 5 7 2 3 5 7 2 3 5 7 2 3 10 0 5 4 3 2 1 6 7 8 9 10 0 10 1 10 2 37 25 37 25 tj = 25c v rgt iii ?60 ?40?20 0 20 40 60 80 100120 140 160 10 3 7 5 3 2 7 5 3 2 10 2 10 1 10 3 10 ?1 7 5 3 2 10 2 7 5 3 2 10 1 7 5 3 2 10 0 7 5 3 2 23 57 2 3 57 2 3 57 23 57 10 4 10 2 10 1 10 5 10 3 maximum on-state characteristics on-state voltage (v) on-state current (a) rated surge on-state current conduction time (cycles at 60 hz) surge on-state current (a) gate characteristics (ii and iii) gate current (ma) gate voltage (v) gate trigger voltage vs. junction temperature junction temperature (c) gate trigger voltage (tj = tc) gate trigger voltage (tj = 25c) 100 (%) gate trigger current vs. junction temperature junction temperature ( c) gate trigger current (tj = tc) gate trigger current (tj = 25c) 100 (%) maximum transient thermal impedance characteristics (junction to ambient) conduction time (cycles at 60 hz) transient thermal impedance ( c/w) typical example typical example ( ) natural convection no fins print board t = 1.6 mm solder land : 2 mm v fgt i , v rgt i
bcr2pm-14le preliminary r07ds0233ej0200 rev.2.00 page 4 of 6 dec 24, 2014 0 0.4 1.0 1.6 1.4 1.2 0.8 0.6 0.2 1.8 0 0.2 0.4 0.6 0.8 1.41.21.0 0 0.4 0.8 1.2 1.6 3.22.8 2.4 2.0 0 20 40 80 60 100 120 140 160 ?60 ?40 ?20 0 20 40 60 80 100 120 160140 10 6 10 2 7 5 3 2 10 5 7 5 3 2 10 4 7 5 3 2 10 3 7 5 3 2 ?40 0 40 80 120 160 ?60 ?40?20 0 20 40 60 80 100120 140 160 10 2 7 5 3 2 7 5 3 2 7 5 3 2 10 1 10 0 10 ?1 0 20 40 80 60 100 120 140 160 on-state power dissipation (w) rms on-state current (a) maximum on-state power dissipation rms on-state current (a) ambient temperature (c) allowable ambient temperature vs. rms on-state current junction temperature (c) rep etitiv e peak off-state current (tj = tc ) rep etitiv e peak off-state current (tj = 25c ) 100 (%) repetitive peak off-state current vs. junction temperature holding current vs. junction temperature junction temperature (c) holding current (tj = tc) holding current (tj = 25 c) 100 (%) breakover voltage vs. junction temperature junction temperature (c) breakover voltage (tj = tc) breakover voltage (tj = 25c) 100 (%) latching current (ma) latching current vs. junction temperature junction temperature (c) 360 conduction resistive, inductive loads typical example ( ) natural convection no fins print board t = 1.6 mm solder land : 2 mm cur v es appl y regardless of condu ction angle resistiv e, indu ctiv e loads typical example typical example t 2 + , g ? distribution ?60 ?20 ?40 10 3 5 7 3 2 5 4 4 7 3 2 10 2 10 1 20 60 100 160140 0 40 80 120 typical example t 2 ? , g ? t 2 + , g +
bcr2pm-14le preliminary r07ds0233ej0200 rev.2.00 page 5 of 6 dec 24, 2014 23 10 0 5710 1 0235710 2 23 5710 3 120 0 20 40 60 80 100 140 160 breakover voltage vs. rate of rise of off-state voltage (tj = 125c) rate of rise of off-state voltage (v/s) 100 (%) breakover voltage (dv/dt = xv/s) breakover voltage (dv/dt = 1v/s) i quadrant iii quadrant typical example tj = 125c 23 10 0 5710 1 0235710 2 23 5710 3 120 0 20 40 60 80 100 140 160 breakover voltage vs. rate of rise of off-state voltage (tj = 150c) rate of rise of off-state voltage (v/s) 100 (%) breakover voltage (dv/dt = xv/s) breakover voltage (dv/dt = 1v/s) typical example tj = 150c 10 1 10 3 7 5 3 2 10 0 23 23 5710 1 10 2 7 5 3 2 5710 2 i fgt i i rgt i 10 ?1 23 23 5710 0 10 0 7 5 3 2 5710 1 10 1 7 5 3 2 10 ?1 6 6 6 6 v 6 v 6 v r g r g r g test procedure i test procedure iii test procedure ii gate trigger characteristics test circuits commutation characteristics critical rate of rise of off-state commutating voltage (v/s) rate of decay of on-state commutating current (a/ms) gate trigger current vs. gate current pulse width gate current pulse width (s) 100 (%) gate trigger current (tw) gate trigger current (dc) i rgt iii typical example conditions v d = 200 v i t = 1 a = 500 s tj = 125c typical example i quadrant iii quadrant minimum characteristics value a v a v a v
bcr2pm-14le preliminary r07ds0233ej0200 rev.2.00 page 6 of 6 dec 24, 2014 package dimensions sc-67 2.0g mass[typ.] t220f(2) prss0003aa-b renesas code jeita package code previous code unit: mm 10.5max 1.5max 3.2 0.2 0.8 2.54 0.5 2.6 2.54 5.2 2.8 13.5min 17 5.0 8.5 1.2 3.6 4.5 package name to-220f(2) ordering information orderable part number packing quantity remark bcr2pm-14le#b00 bag 100 pcs. straight type bcr2pm-14le-as#b00 tube 50 pcs. as lead form note : please confirm the specificat ion about the shipping in detail.
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